Article ID Journal Published Year Pages File Type
1674228 Thin Solid Films 2007 4 Pages PDF
Abstract

Ga- or In-doped BaSi2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 1016 and 1017 cm− 3 at RT.

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Physical Sciences and Engineering Materials Science Nanotechnology
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