Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674228 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Ga- or In-doped BaSi2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 1016 and 1017 cm− 3 at RT.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Kobayashi, K. Morita, T. Suemasu,