Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674353 | Thin Solid Films | 2007 | 6 Pages |
Abstract
Experimental results concerning detection and emission of THz electromagnetic radiation in nanometer Field Effect Transistors are reviewed. The experiments were performed on GaAs/GaAlAs and GaInAs/AlInAs High Electron Mobility Transistors and Si Metal Oxide Semiconductor Field Effect Transistors at room and liquid helium temperatures. The results are interpreted within a model of the electron plasma instability in the transistor channel.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Łusakowski,