Article ID Journal Published Year Pages File Type
1674353 Thin Solid Films 2007 6 Pages PDF
Abstract

Experimental results concerning detection and emission of THz electromagnetic radiation in nanometer Field Effect Transistors are reviewed. The experiments were performed on GaAs/GaAlAs and GaInAs/AlInAs High Electron Mobility Transistors and Si Metal Oxide Semiconductor Field Effect Transistors at room and liquid helium temperatures. The results are interpreted within a model of the electron plasma instability in the transistor channel.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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