| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674354 | Thin Solid Films | 2007 | 7 Pages |
Abstract
The present status in the development of diamond as electronic semiconductor material with wide band-gap (5.45 eV) is reviewed. Since diamond cannot be doped with shallow impurities, specific doping concepts and related diode and FET structures had to be developed, restricted to p-type boron doping. The results allow to predict that diamond high voltage switching diodes, high power RF FET sources and operation at high temperature will surpass the capability of devices designed in competing wide band-gap materials like SiC and GaN.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Erhard Kohn, Andrej Denisenko,