Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674358 | Thin Solid Films | 2007 | 4 Pages |
Abstract
We have modeled the effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate. Blue shifts of emission wavelength as large as 270 nm and 700 nm are predicted from a 6 nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3 nm, and from a 10 nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5 nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion are also investigated.
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Authors
Y. Wang, H.S. Djie, B.S. Ooi, P. Rotella, P. Dowd, V. Aimez, Y. Cao, Y.H. Zhang,