Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674361 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Olena Lopatiuk, Leonid Chernyak, Yishai Feldman, Konstantin Gartsman,