Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674379 | Thin Solid Films | 2007 | 4 Pages |
Abstract
GaAs-based double-heterojunction p–i–n photodetectors using InzGa1−zAs1−x−yNxSby in the i-layer are fabricated for the first time using the solid source molecular beam epitaxy growth method. A peak responsivity of ∼ 0.29 A/W, corresponding to quantum efficiencies (QE) of 38% is attained from the best p–i–n device between 0.9 and 1.1 μm. The dark current is ∼ 70 nA at a reverse bias of 2 V and the cutoff wavelength reaches ∼ 1.4 μm. The surfactant effect generated by the presence of Sb in this material allows thick high quality dilute nitride material growth. A Sb-free p–i–n device consisting of InGaAsN/GaAs is also fabricated to compare the device performance with the InGaAsNSb/GaAs p–i–n devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
W.K. Cheah, W.J. Fan, S.F. Yoon, D.H. Zhang, B.K. Ng, W.K. Loke, R. Liu, A.T.S. Wee,