Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674387 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions.
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Authors
H.T. Wang, L.S. Tan, E.F. Chor,