| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674389 | Thin Solid Films | 2007 | 4 Pages |
Abstract
We report a broadband GaN-based semiconductor saturable absorber mirror (SESAM) operating around 415Â nm. The GaInN quantum wells (QWs) acting as saturable absorbers were grown by metal-organic chemical vapor deposition (MOCVD). A broadband dielectric high-reflective distributed Bragg reflector (DBR) was deposited onto the QW sample using plasma-enhanced chemical vapor deposition (PECVD) to build the SESAM. The SESAM has a stopband of over 100Â nm. The linear and nonlinear transmission/absorption from QWs and the reflectance from DBR and SESAM were studied. This SESAM can be applied in passively mode-locking blue lasers such as GaN-based semiconductor lasers for producing ultra-short optical pulses.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. Xiang, F. Lin, H.P. Li, H.F. Liu, W. Liu, W. Ji, S.J. Chua,