| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674408 | Thin Solid Films | 2008 | 5 Pages |
Abstract
The analysis of photoelectrical properties of heterostructure solar cells biased on GaInP is performed using a numerical modelling. The influence of AlInP/GaInP and AlGaAs/GaInP interface parameters and properties of AlInP layer on solar cells characteristics is shown. In particular, a crucial role of the band offsets and of interface states in defining the solar cell efficiency is demonstrated. The observed difference in photovoltaic performance of p–n versus n–p junctions is explained in terms of the parameters outlined above. The simulation results are supported by experimental data.
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Authors
A.S. Gudovskikh, N.A. Kaluzhniy, V.M. Lantratov, S.A. Mintairov, M.Z. Shvarts, V.M. Andreev,