| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674434 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical microscope. Poly-Si films formed on ZnO:Al coated glass consist of high-quality poly-Si material, as evidenced by Raman measurement. The average grain size of the poly-Si films slightly increases with decreasing annealing temperature. The formation of poly-Si films on ZnO:Al coated glass led to a preferential (001) orientation at all annealing temperatures (425 °C ~ 525 °C).
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Authors
K.Y. Lee, M. Muske, I. Gordon, M. Berginski, J. D'Haen, J. Hüpkes, S. Gall, B. Rech,