Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674438 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Hydrogenated polymorphous silicon (pm-Si:H) films were fabricated by conventional RF plasma enhanced chemical vapour deposition at high deposition rate (~ 8 Å/s). The details of DOS distribution in the whole mobility gap and transport properties of both types of carriers were studied using a set of complementary techniques before and after light-soaking. The results show that these properties are similar to those of standard a-Si:H, or even can exceed them, at least for diffusion length in both states before and after light-soaking.
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Physical Sciences and Engineering
Materials Science
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Authors
Y.M. Soro, A. Abramov, M.E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, J.P. Kleider,