Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674447 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Apart from hydrogen, which has been used in previous studies, argon was found to be also compatible with the reorganisation. This result points out that the presence of oxygen impurities may not be as deleterious as expected, but that those impurities complicate the set of reactions taking place during the high-temperature process.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
V. Depauw, O. Richard, H. Bender, I. Gordon, G. Beaucarne, J. Poortmans, R. Mertens, J.-P. Celis,