Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674474 | Thin Solid Films | 2008 | 5 Pages |
Abstract
We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180–200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current–voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance × area product, the R0C0-time constant and the detectivity D⁎ are presented.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Z. Dashevsky, V. Kasiyan, E. Mogilko, A.V. Butenko, R. Kahatabi, S. Genikov, V. Sandomirsky, Y. Schlesinger,