| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674515 | Thin Solid Films | 2007 | 5 Pages |
Abstract
Intrinsic, thermal, and hygroscopic contributions to the in-plane residual stress in silicon nitride films on polyimide substrates are identified, based on iso-hygric thermal ramps and isothermal relative humidity jumps, combined with non-linear elastic modeling of the resulting dynamics of film curvature. This approach enables the thermal and hygroscopic properties of thin nitride films to be determined and provides useful input for material and process control.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. Dumont, G. Tornare, Y. Leterrier, J.-A.E. Månson,