| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674524 | Thin Solid Films | 2007 | 5 Pages |
Abstract
The capabilities and limitations of the well-known C–V technique for the determination of the conduction band offsets in (n)a-Si:H/(p)c-Si heterojunctions are presented. In particular, the effects due to the presence of an inversion layer in c-Si and a non-negligible defect density at the a-Si:H/c-Si interface on the reliability of the C–V intercept method are discussed. The influence of the Fermi level positions in (p)c-Si and (n)a-Si:H on the inversion layer formation and the influence of the interface defect density have been analysed using numerical simulations and experimental measurements.
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Authors
A.S. Gudovskikh, S. Ibrahim, J.-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti, P.-J. Ribeyron,