Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674525 | Thin Solid Films | 2007 | 4 Pages |
Abstract
For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations.We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
T. Bronger, R. Carius,