Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674533 | Thin Solid Films | 2007 | 4 Pages |
Abstract
p-i-n diodes based on amorphous and microcrystalline silicon are used for different applications like sensors or solar cells. However, their long-term stability and dynamic behavior are still under discussion. Therefore, the optical properties of both types of diodes were investigated by a comparative study. The long-term stability of non-encapsulated devices was tested by means of light soaking, damp heat testing and high-temperature treatment of up to 2000 h. The dynamic properties of the thin-film silicon photodetectors were studied by measuring and analysing the admittance under different bias conditions.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H. Stiebig, E. Moulin, B. Rech,