Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674536 | Thin Solid Films | 2007 | 4 Pages |
Abstract
We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.V. Kolobov, P. Fons, J. Tominaga,