Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674537 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Electronic structure calculations are presented for various model structures of the crystalline and amorphous phases of Ge2Sb2Te5. The structures are all found to possess a band gap of order 0.5 eV, indicating closed shell behaviour. It is pointed out that structural vacancies in A7-like Ge2Sb2Te5 are not electronically active. In addition, A7-like structures do not support valence alternation pair defects, which are one model of the conduction processes in the amorphous phase in non-volatile memories.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Robertson, K. Xiong, P.W. Peacock,