Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674538 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Novel approaches to achieve uniform deposition, in particular for dielectric oxides, are highly desirable in the fields of electronics and optics. We succeeded to deposit thin films of alumina (Al2O3) with high uniformity on 150 mm diameter Si wafers. We use thermal decomposition in oxygen atmosphere of Aluminum isopropoxide, under molecular flow regime, in a High Vacuum Chemical Vapor Deposition (HV–CVD) reactor.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
X. Multone, C.N. Borca, P. Hoffmann,