Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674539 | Thin Solid Films | 2007 | 5 Pages |
Abstract
We have studied the transfer characteristic variations induced by aging effects and applied voltage in top contact pentacene thin film transistors (OTFTs) fabricated by using Polymethylmetacrylate buffer layer. The electrical stability of pentacene OTFTs was tested by applying prolonged bias stress (up to 104 s) with gate voltage Vgstress = − 30 V and + 30 V. The environmental effects were analysed by measuring the degradation of electrical characteristics of OTFT exposed to air. The results have been analysed in terms of trap state model, evaluating the channel conductance using a one-dimensional approach. This allows us to correlate the transfer characteristics variations to changes in localised state distribution.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Cipolloni, L. Mariucci, A. Valletta, D. Simeone, F. De Angelis, G. Fortunato,