Microcrystalline silicon and excimer laser crystallized silicon Thin Film Transistors on the same substratel

Integration of microcrystalline silicon Thin Film Transistors (TFTs) and excimer laser crystallized silicon TFTs on the same substrate is performed with the objective to limit the maximum temperature of the process to 200 °C. For the second type of TFTs, the laser crystallization of 200 nm thick microcrystalline silicon deposited film was optimised first. The maximum electron mobility of both μc-Si and laser crystallized TFTs is 4 cm2/V s and 400 cm2/V s respectively.