Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674564 | Thin Solid Films | 2007 | 4 Pages |
Abstract
The piezoresistive property of n-type and p-type nanocrystalline silicon thin films deposited on plastic (PEN) at a substrate temperature of 150 °C by hot-wire chemical vapor deposition, is studied. The crystalline fraction decreased from 80% to 65% in p-type and from 84% to 62% in n-type films, as the dopant gas-to-silane flow rate ratio was increased from 0.18% to 3–3.5%. N-type films have negative gauge factor (− 11 to − 16) and p-type films have positive gauge factor (9 to 25). In n-type films the higher gauge factors (in absolute value) were obtained by increasing the doping level whereas in p-type films higher gauge factors were obtained by increasing the crystalline fraction.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. Alpuim, M. Andrade, V. Sencadas, M. Ribeiro, S.A. Filonovich, S. Lanceros-Mendez,