Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674565 | Thin Solid Films | 2007 | 5 Pages |
Abstract
Bottom gate microcrystalline silicon thin film transistors (μc-Si TFT) have been realized with two types of films: μc-Si(1) and μc-Si(2) with crystalline fraction of 80% and close to 100% respectively. On these TFTs we applied two types of passivation (SiNx and resist). μc-Si TFTs with resist as a passivation layer present a low leakage current of about 2.10â 12 A for VG = â 10 and VD = 0.1V an ON to OFF current ratio of 106, a threshold voltage of 7 V, a linear mobility of 0.1 cm2/V s, and a sub-threshold voltage of 0.9 V/dec. Microcrystalline silicon TFTs with SiNx as a passivation present a new phenomenon: a parasitic current for negative gate voltage (â 15 V) causes a bump and changes the shape of the sub-threshold region. This excess current can be explained by and oxygen contamination at the back interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Maher Oudwan, Yassine Djeridane, Alexey Abramov, Bernard Aventurier, Pere Roca i Cabarrocas, François Templier,