Article ID Journal Published Year Pages File Type
1674574 Thin Solid Films 2007 5 Pages PDF
Abstract
We synthesized a novel thermally-crosslinkable ormosil-based hybrid material as a solution-processable dielectric layer for organic thin-film transistors (OTFTs). Dielectrics with a thickness of 50-260 nm were fabricated via spin-coating in order to evaluate their applicability as an ultra-thin gate dielectric. It was observed that the capacitance of the hybrid dielectric increases with decreasing film thickness. Hybrid dielectrics with a thickness of 260 nm and 160 nm, respectively, exhibited adequate leakage current behavior. Coplanar-type OTFTs were fabricated using each of the hybrid dielectrics (i.e., thickness of 260 nm and 160 nm). The off-current, threshold voltage, and field-effect mobility of both transistors were analyzed to investigate the effects of capacitance and film thickness on the electrical performance of the transistors.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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