Article ID Journal Published Year Pages File Type
1674651 Thin Solid Films 2006 6 Pages PDF
Abstract
In this work we study the evolution of porous silicon photoluminescence under illumination. Samples were obtained by electrochemical etching of crystalline silicon wafers of different types. For the p-type samples the evolution of the spectra is explained in terms of photoinduced oxidation of nanostructures, which in turns leads to a discrete change in the photoluminescence spectra, as we reported in previous works. For the n-type material, a progressive decrease of the luminescence intensity is observed, which is attributed to the photoinduced generation of dangling bond related defect states at the surface layer surrounding the nanostructures. This model explains qualitatively well the kinetics of the evolution of the measured photoluminescence. Preliminary results of electronic paramagnetic resonance spectroscopy agree with this model.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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