Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al2O3 dielectric are reported. Saturation mobility of 0.38 cm2/V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 108 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al2O3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to − 5 V at supply voltage of − 5 V.