Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674750 | Thin Solid Films | 2007 | 4 Pages |
Piezoelectric AlN thin films were deposited on Silicon substrates by triode reactive sputtering. The variation of residual stress versus bias voltage on the substrate was investigated. A compressive stress was always observed with a maximum value for a negative substrate bias of 50 V. For higher negative bias voltage values, the compressive stress decreases. X-ray diffraction measurements showed two kinds of growth orientation. First, without bias voltage, films are well crystallized and (002) oriented. Second, with bias voltage, the (002) orientation disappears and a small peak appears (situated in the 2θ = 32°–33° range) which can be attributed to (100) orientation. Finally, the influence of compressive stress and ion bombardment on the change of orientation is discussed.