Five-source PVD for the deposition of Cu(In1−xGax)(Se1−ySy)2 absorber layers

A new five-source PVD system was developed for the deposition of Cu(In1−xGax)(Se1−ySy)2 (CIGSS) thin films. The system allows the independent and controlled deposition of all five elements. In the first part of this paper, we investigate CIGSS formation via a double-layer process of depositing a Cu-S or Cu-Se layer on top of an In-Ga-Se or In-Ga-S layer, respectively. Incomplete intermix of two different chalcopyrite species is observed. In one case, additionally, an enrichment of Ga at the interface between those two layers is observed. In the second part of the paper, films within the complete compositional range of 0