| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674846 | Thin Solid Films | 2005 | 4 Pages |
Abstract
The electronic interface properties of magnetron-sputtered ZnTe with CdTe and ZnO:Al have been characterized using X-ray photoelectron spectroscopy (XPS). For the CdTe/ZnTe interface, a valence band offset of 0.1±0.05 eV has been found, which is in agreement to previous investigations of ZnTe films deposited by physical vapour deposition onto CdTe substrates. The ZnO:Al/ZnTe interface is of interest as tunnelling barrier in tandem solar cells. We have found a type II band alignment with a valence band offset of 2.37±0.1 eV corresponding to a conduction band offset of 1.34±0.1 eV, which should be almost ideal for tunnelling contacts.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
B. Späth, J. Fritsche, F. Säuberlich, A. Klein, W. Jaegermann,