| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1674887 | Thin Solid Films | 2005 | 4 Pages |
Abstract
Using molecular beam epitaxy (MBE), CuInS2 (CIS) films have been grown on 4-in Si(111) substrates. For a detailed investigation by means of photoluminescence (PL) spectroscopy, samples were either taken as grown or subjected to postgrowth treatments, including KCN etching and hydrogen implantation. Altogether, six defect-related transitions at 1.48 (#1), 1.436 (#2), 1.395 (#3), 1.345 (#4), 1.195 (#5) and 1.03 eV (#6) were observed and analysed by means of power-dependent measurements. Thus, one free-to-bound (#1) and five donor–acceptor transitions (#2–#6) were identified. The energetically highest of these observed transitions were combined in a model for intrinsic defect levels which includes two acceptor and one donor states.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Eberhardt, H. Metzner, R. Goldhahn, F. Hudert, U. Reislöhner, C. Hülsen, J. Cieslak, Th. Hahn, M. Gossla, A. Dietz, G. Gobsch, W. Witthuhn,