Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices

This paper deals with the fabrication process of single-crystal silicon carbide (SiC) thin-films and its application to microdevice. SiC thin-film was synthesized using molecular beam epitaxy, where single-crystal SiC layer was grown on single-crystal silicon (Si) substrate. Using lithography and etching process, microscopic cantilevers were fabricated. Typical dimensions of the cantilevers were 10-60 μm in length, 10-30 μm in width, typically 180 nm in thickness. Young's modulus estimated from bending test was almost the same with that of bulk material. Finally, an application is demonstrated where nickel was deposited on the cantilever and biomorphic actuation was carried out. The displacement at the tip was about 2 μm when the temperature change was 40 K. The time constant of the step response was about 0.07 s.