Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1674992 | Thin Solid Films | 2008 | 5 Pages |
Abstract
ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Dong Chan Kim, Bo Hyun Kong, Sang Ouk Jun, Hyung Koun Cho, Dong Jun Park, Jeong Yong Lee,