Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675049 | Thin Solid Films | 2006 | 5 Pages |
Abstract
Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H.F. Jurca, I. Mazzaro, W.H. Schreiner, D.H. Mosca, M. Eddrief, V.H. Etgens,