Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675106 | Thin Solid Films | 2006 | 5 Pages |
Abstract
Epitaxial growth of CeO2 and yttria-stabilized ZrO2 (YSZ) double layer films has been successfully carried out on biaxially textured nickel substrates at a temperature between 400 and 600 °C using electrostatic spray assisted vapour deposition method. The structure of the double layer was characterized by X-ray diffraction and scanning electron microscopy. The results show that highly oriented CeO2/YSZ double buffer films were formed epitaxially onto biaxially textured Ni substrates. The orientation relationships between YSZ layer and Ni substrate are 001YSZ//001Ni and 110YSZ//100Ni, while the orientation relationships between CeO2 and YSZ are 001CeO2//001YSZ and 100CeO2//100YSZ.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ming Wei, Kwang-Leong Choy,