Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675176 | Thin Solid Films | 2007 | 5 Pages |
Abstract
ZnO films with improved crystallinity were grown on a Si (111) substrate by a two-step growth process using low-temperature ZnO buffer layers. The effect of the ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural properties of the films was investigated by X-ray diffraction (XRD), photoluminescence, and transmission electron microscopy. The use of argon as the ambient gas during the thermal treatment of the buffer layer leads to the enhancement of the (0002) diffraction peak intensity at 2θ â¼Â 34.4° and the reduction of the full width at half maximum value in the XRD rocking curve, which means that well-defined and c-axis oriented ZnO film was obtained. The relationship between the thickness of the SiO2 layer between the ZnO buffer layers and Si substrates and the structural and optical properties of the ZnO films is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Dong Jun Park, Jeong Yong Lee, Tae Eun Park, Young Yi Kim, Hyung Koun Cho,