Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675183 | Thin Solid Films | 2007 | 7 Pages |
Abstract
Titanium nitride thin films were deposited by direct current magnetron sputtering with various tantalum (Ta) concentrations (2, 4 and 8Â at.%). The films were characterized using UV/VIS spectrophotometer. Atomic force microscopy (AFM), high resolution transmission electron microscope (HRTEM) were used to observe the microstructure and X-ray photoelectron spectroscopy was used to investigate the core level and the valence band of the films. It was found that the film with 2Â at.% Ta is more reflective in the infrared range and more transparent in the visible region (selective behavior). The AFM showed smooth nanostructured surface for the film without Ta addition. It was found that the films with 2Â at.% Ta presented relatively coarser grains with larger roughness and the reflectance are not controlled by the surface morphology. Also, this film presented higher electrical conductivity. HRTEM analysis showed that 2Â at.% Ta addition gave rise to well crystallized films with elongated nanocrystallites in comparison with the films having 0, 4 and 8Â at.% Ta contents.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
O. Bourbia, S. Achour, N. Tabet, M. Parlinska, A. Harabi,