Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675209 | Thin Solid Films | 2007 | 5 Pages |
Abstract
The synthesis and properties of CuAl2O4 thin films have been examined. The CuAl2O4 films were deposited via reactive direct current magnetron sputter using a CuAl2 target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl2O4 was determined to be ∼ 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be ∼ 20–23 at 1–100 kHz.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L.C. Leu, D.P. Norton, G.E. Jellison Jr., V. Selvamanickam, X. Xiong,