Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675222 | Thin Solid Films | 2007 | 4 Pages |
Abstract
AgInSe2 (AIS) films were grown on n-type Si substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction and microscopic studies of the films show that films are textured having terrace-like surface morphology. The optical studies of the films show that the optical band gap is about 1.24 eV. The electrical conductivity of AgInSe2/Si films shows excellent diode characteristics. The photoconductivity of the AgInSe2/Si device shows photocurrent of 2.8 mA at a bias-voltage of − 1 V with an open circuit voltage of 0.15 V. This shows that AIS films are very good absorber material for solar cell technology.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H. Mustafa, D. Hunter, A.K. Pradhan, U.N. Roy, Y. Cui, A. Burger,