ZnO thin films prepared by a single step sol-gel process

ZnO thin films were prepared on fused silica from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH ] and isopropanol. Crystallization annealing was performed over the range 500 to 650 °C. X-ray analysis showed that thin films were preferentially orientated along the [002] c-axis direction of the crystal. The films had a transparency of greater than 85% in the visible region for sol-gels with a zinc content of up to 0.7 M and exhibited absorption edges at ∼ 378 nm. The optical band-gap energy was evaluated to be 3.298-3.306 eV. Photoluminescence showed a strong emission centered at ca. 380 nm along with a broad yellow-orange emission centered at ca. 610 nm. Single step sol-gel thin film deposition in the film thickness range from 80 nm to 350 nm was demonstrated. The effect of sol-gel zinc concentration, film thickness and crystallization temperature on film microstructure, morphology and optical transparency is detailed. A process window for single spin coating deposition of c-axis oriented ZnO discussed.