| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675315 | Thin Solid Films | 2006 | 4 Pages |
Abstract
In this work, we have investigated the capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO2/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G–V characteristic.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
C.Y. Ng, G.S. Lum, S.C. Tan, T.P. Chen, L. Ding, O.K. Tan, A. Du,