| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675320 | Thin Solid Films | 2006 | 4 Pages |
Abstract
In this article, a double gate poly-Si TFT structure is analyzed to study the variation of channel potential profile and threshold voltage with dielectric constant, metal work-function and other device parameters. Green's Function is used to obtain two-dimensional potential distribution. The potential profiles obtained give insight into the device behavior and an estimation of threshold voltage for the device under consideration. Device simulation is also done using ATLAS simulator and the results obtained are compared with proposed two-dimensional model. The modeled results are found to be in good agreement with simulated data.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Amit Sehgal, Tina Mangla, Sonia Chopra, Mridula Gupta, R.S. Gupta,