Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675326 | Thin Solid Films | 2006 | 5 Pages |
Abstract
Solid-state reactions between Er and Ge (001) under different processing conditions were investigated. Under normal rapid thermal processing (RTP) in high-purity N2 ambience, the Er-Ge film formation was 'contaminated' with Er2O3 even at low temperature annealing. Ti capping of Er films before RTP delayed Er2O3 formation with the Ti cap acting as a sacrificial layer for the Er underneath. Vacuum annealing of Er films significantly reduced Er2O3 formation even after higher temperature annealing. High quality Er-Ge films can thus be formed through solid-state reaction of Er and Ge if oxygen contamination from annealing ambient during RTP is controlled. The Er-Ge phase had low sheet resistance values averaging 3 to 4 Ω/sq. ErGe1.8 was formed from the solid-state reaction between Er and Ge(001) in vacuum.
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Authors
S.L. Liew, B. Balakrisnan, S.Y. Chow, M.Y. Lai, W.D. Wang, K.Y. Lee, C.S. Ho, T. Osipowicz, D.Z. Chi,