| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675328 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1−xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1−yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1−xGex samples especially after annealing at 600 °C.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Q.F. Daphne Yiew, Y. Setiawan, P.S. Lee, D.Z. Chi,