| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675331 | Thin Solid Films | 2006 | 4 Pages |
Abstract
A process to stabilise the formation of NiGe using Zr alloying engineering approach was investigated. The NiGe film maintained continuity up to 600 °C with NiGe phase stable up to 700 °C. Secondary ion mass spectroscopy and transmission electron microscopy characterisations showed that a thin ZrOx layer was formed on top of NiGe. The ZrOx layer acted as a capping layer to NiGe. As a result, the morphology and phase formation of NiGe were stabilised. We propose Ni(Zr) alloy as a promising material for germanides metallisation contacts in metal-oxide-semiconductor field-effect transistors (MOSFETs).
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
S.L. Liew, R.T.P. Lee, K.Y. Lee, B. Balakrisnan, S.Y. Chow, M.Y. Lai, D.Z. Chi,