Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the frictional heat in a polishing process and the environmental temperature of the remaining heat after a high-temperature conditioning process. These changed properties caused the slurry to make an oxide surface to be easily removed in the hydro-carbonated state. The slurry residues in pores and grooves of polishing pad were also clearly removed by the high-temperature conditioning process, which aided the slurry to attack the oxide surface.