| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675361 | Thin Solid Films | 2006 | 4 Pages |
Abstract
The properties for Ru/Ta and Ru/TaN bi-layer on Si substrate were investigated. The Ru, Ta and TaN films were deposited by ion beam sputtering technology and were annealed at temperatures ranging from 300 °C to 900 °C in high purity N2 ambient. The phase formation, microstructure evolution and thermal stability for the Ru/Ta/Si and Ru/TaN/Si structures were investigated. Results show that adding the Ta or TaN layer between Ru and Si delays the reaction of Ru with Si. The Ru/TaN bi-layer is more stable on Si and shows better diffusion barrier property than the Ru/Ta bi-layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jing-Jing Tan, Xin-Ping Qu, Qi Xie, Yi Zhou, Guo-Ping Ru,