Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675364 | Thin Solid Films | 2006 | 5 Pages |
Abstract
Cu diffusion is one major problem that inhibits low-k dielectric to be integrated with existing fabrication technology effectively. This paper demonstrates the effects of surface modification towards polymethylsiloxane low-k dielectric (LKD 5109) from JSR Micro using gas mixture of H2Â +Â N2 plasma in order to improve Cu diffusion barrier. C-V plots indirectly indicated that plasma treatment reduces Cu+ ions penetration during Cu deposition using magnetron sputtering. XPS confirmed that short duration (10 to 30 s) of H2Â +Â N2 plasma treatment could cause surface densification of LKD 5109 low-k thin film through formation of N-C bonds. However, the negative effect of plasma treatment is the increment of dielectric constant (k) due to possible surface densification.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.C. Aw, N.T. Salim, W. Gao, Z. Li,