| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675467 | Thin Solid Films | 2006 | 4 Pages |
Abstract
In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ta-Shan Chang, Ting-Chang Chang, Po-Tsun Liu, C.Y. Chiang, S.C. Chen, Feng-Sheng Yeh,