Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675483 | Thin Solid Films | 2006 | 6 Pages |
Abstract
In the present work, the growth of concomitant nitride layers during a post-discharge process is studied. The analysis takes into account the similarities and differences between nitriding post-discharge processes and other nitriding processes, employing a mathematical simulation of nitrogen diffusion.The considered differences are related to the thermodynamic standard states, the nitrogen concentration on the surface and the sputtering of the surface (this one for plasma processes). Nitrogen diffusion and layer formation are described from the beginning of the process by means of a mathematical model.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Oseguera, F. Castillo, A. Gómez, A. Fraguela,